Mar 28, 2018EXPANSIONXi'an, Shaanxi, China Samsung breaks ground on second memory chip plant in Xi'an, China
Samsung (China) Semiconductor Co., Ltd. held a groundbreaking ceremony for its second-phase memory chip project in Xi'an, Shaanxi province, on March 28, 2018. The expansion follows a 2017 investment agreement with the Shaanxi provincial government to meet growing demand for high-end V-NAND products.
Capacity
220,000 300mm wafers per month
ProductsV-NAND memory chips
“将会通过二期的成功运营生产最尖端的存储芯片,为客户提供独具匠心的解决方案”chinanews.com.cn
- 3 sources
- chinanews.com.cn三星芯片项目再落西安 助力西北地区产业发展-中国新闻网Mar 28, 2018
- telecompaper.comSamsung starts building second chip production line at Xian factory - TelecompaperMar 28, 2018
- aldfinancials.blogspot.comBALD Financial News: Samsung Electronics to double 3DNAND memory output capacity in ChinaJonas SundqvistApr 7, 2018
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