Tsinghua Unigroup breaks ground for $30B memory plant in Nanjing

Tsinghua Unigroup broke ground for a memory plant in Nanjing, China, to manufacture 3D NAND flash and DRAM chips. The two-phase project has a total investment of about US$30 billion, with phase one expected to be completed by 2019.

“Tsinghua Unigroup has recently broken ground for a memory plant in Nanjing which will be engaged in the manufacture of 3D NAND flash and DRAM chips.”simmtester.com

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• simmtester.comCST Inc,DDR5,DDR4,DDR3,DDR2,DDR,Nand,Nor,Flash,MCP,LPDDR,LPDDR2,LPDDR3,LPDDR4,LRDIMM, Memory Tester Automatic DIMM SODIMM Handler Company Provides Memory SolutionApr 12, 2017

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