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Jiangsu Zhiyuan Semiconductor held a groundbreaking ceremony for a large-power discrete device project in Tongshan District (Xuzhou High-tech Zone), Xuzhou. The project, with a total investment of CNY 3 billion, is expected to produce 380 million semiconductor devices annually.
| Site | Largest | Latest |
|---|---|---|
| Tongshan District (Xuzhou High-tech Zone), China | $450.0M | 2020-10-23 |