Jiangsu Zhiyuan breaks ground on $30B semiconductor power device plant in Xuzhou

Jiangsu Zhiyuan Semiconductor held a groundbreaking ceremony for a large-power discrete device project in Tongshan District (Xuzhou High-tech Zone), Xuzhou. The project, with a total investment of CNY 3 billion, is expected to produce 380 million semiconductor devices annually.

“特别是总投资30亿元的江苏致远半导体大功率分立器件项目，达产后可年产半导体器件3.8亿只”news.hqew.com

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• news.hqew.com年产3.8亿！30亿元江苏致远半导体大功率分立器件项目奠基-华强资讯-华强电子网Oct 23, 2020

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