GT Advanced Technologies

GT Advanced Technologies (GTAT) and ON Semiconductor signed a five-year agreement valued at up to $50 million for GTAT to produce and supply its CrystX silicon carbide material to ON Semiconductor for use in power electronics applications.

ON Semiconductor announced a 5-year contract with GT Advanced Technologies (GTAT) for the supply of CrystX SiC materials, valued at approximately $50 million. GTAT will produce and supply SiC materials to ON Semiconductor for use in high-power semiconductor applications.

GT Advanced Technologies will produce and supply its CrystX silicon carbide material to ON Semiconductor under a five-year agreement valued at up to $50 million.

GlobalWafers and GT Advanced Technologies entered into a long-term agreement to produce 150mm silicon carbide wafers, combining GTAT's bulk SiC crystal with GlobalWafers' wafer manufacturing expertise.