Hangzhou Li'ang Microelectronics Co., Ltd.

Hangzhou Li'ang Microelectronics (立昂微) announced a 4.3 billion yuan investment to build a 6-inch GaAs/GaN microwave RF IC plant in Haining, Zhejiang, with annual capacity of 360,000 wafers. The project will be implemented in phases over five years via a new subsidiary, Haining Li'ang Dongxin Microelectronics.

Hangzhou Li'ang Microelectronics Co., Ltd. signed an agreement to invest 8.3 billion yuan in a project to produce 3.6 million 12-inch silicon wafers per year for integrated circuits in Quzhou, Zhejiang. Phase 1 investment is 3.5 billion yuan for 1.8 million wafers per year.