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Hangzhou Li'ang Microelectronics (立昂微) announced a 4.3 billion yuan investment to build a 6-inch GaAs/GaN microwave RF IC plant in Haining, Zhejiang, with annual capacity of 360,000 wafers. The project will be implemented in phases over five years via a new subsidiary, Haining Li'ang Dongxin Microelectronics.
“该项目建成后预计年产 36 万片 6 英寸砷化镓/氮化镓微波射频集成电路芯片。”casmita.com
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