Fuxin Semiconductor to build CNY 40B analog chip IDM project in Hangzhou

Fuxin Semiconductor's analog chip IDM project, with a total investment of CNY 40 billion, will build a 12-inch wafer fab with 65-90nm process technology, producing power management analog chips for automotive, AI, mobile, smart home and industrial applications. The project is located in the Hangzhou High-tech Zone (Binjiang) Fuyang Special Cooperation Zone.

“富芯半导体模拟芯片IDM项目总投资400亿元、用地647亩，拟建设12英寸、加工精度65-90nm集成电路芯片生产线”semiwebs.com

• 1 source
• semiwebs.com总投资400亿元！又一半导体项目落户杭州-芯通社IC猫Mar 20, 2020

Summarized from public sources; check the original articles before acting on it.