STMicroelectronics and Sanan Optoelectronics form SiC device manufacturing JV in China

STMicroelectronics and Sanan Optoelectronics signed an agreement to create a 200mm silicon-carbide device manufacturing joint venture in China, with a target production start in Q4 2025 and full buildout by 2028. The total investment is expected to be about $3.2 billion.

“The new SiC fab has a target of production in Q4 2025, with a full buildout anticipated in 2028.”engineersgarage.com

• 1 source
• engineersgarage.comSTMicroelectronics and Sanan Optoelectronics to advance silicon-carbide ecosystemMichelle FroeseJun 14, 2023

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