Zhonghuan Semiconductor invests $323m in polysilicon project in Inner Mongolia

Zhonghuan Semiconductor (TZS) is investing RMB 2.06 billion (US$323 million) in a new 120,000-metric-ton polysilicon project and R&D facilities in Hohhot, Inner Mongolia. The project includes a high-purity polysilicon plant and a national silicon material R&D centre.

“Zhonghuan Semiconductor (TZS) is to invest RMB2.06 billion (US$323 million) in a new 120,000MT-capacity polysilicon project and additional polysilicon R&D facilities in Inner Mongolia.”pv-tech.org

• 1 source
• pv-tech.orgTZS unveils US$323m polysilicon, R&D expansion plan - PV TechLiam StokerApr 11, 2022

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