Toshiba to build new 300mm wafer fab for power semiconductors in Ishikawa

Toshiba Electronic Devices & Storage Corporation announced it will construct a new 300-millimeter wafer fabrication facility for power semiconductors at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, Japan. Phase 1 production is scheduled to start within fiscal 2024, and when fully operational, capacity will be 2.5 times that of fiscal 2021.

“Toshiba today announced that it will construct a new 300-milimeter wafer fabrication facility for power semiconductors at its main discrete semiconductor production base, Kaga Toshiba Electronics Corporation, in Ishikawa Prefecture.”toshiba.semicon-storage.com

• 2 sources
• toshiba.semicon-storage.comToshiba to Expand Power Semiconductor Production Capacity with 300-millimeter Wafer Fabrication Facility | Toshiba Electronic Devices & Storage Corporation | Asia-EnglishFeb 1, 2022
• toshiba.semicon-storage.comToshiba to Expand Power Semiconductor Production Capacity with 300-millimeter Wafer Fabrication Facility | Toshiba Electronic Devices & Storage Corporation | Americas – United StatesFeb 4, 2022

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