NXP opens GaN fab for 5G RF power amplifiers in Chandler, Arizona
NXP Semiconductors has opened a new 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona, the most advanced GaN fab for 5G RF power amplifiers in the United States.
Starts operating
29 Sep 2020
Capacity
150 mm (6-inch) wafer fab
ProductsRF Gallium Nitride (GaN) power amplifiers5G base station components
“Today marks a critical milestone for NXP. By building this incredible facility and tapping key talent in , we are able to bring focus to GaN technology as part of driving the next generation of 5G base station infrastructure.”nxp.com
- 6 sources
- nxp.comNXP Advances 5G with New Gallium Nitride Fab in Arizona | NXP SemiconductorsNXP SemiconductorsSep 29, 2020
- investors.nxp.comNXP Advances 5G with New Gallium Nitride Fab in Arizona | NXP SemiconductorsSep 29, 2020
- telecom.economictimes.indiatimes.comDutch chipmaker NXP opens gallium-nitride 5G chip plant in Arizona, ETTelecomET TelecomSep 30, 2020
- semiconductor-today.comNXP opens new 6” RF GaN fab in ArizonaOct 1, 2020
- news.pcim.mesago.comNXP advances 5G with new gallium nitride fab in ArizonaJochen SchwabOct 5, 2020
Summarized from public sources; check the original articles before acting on it.
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