Samsung to boost Xi'an NAND flash fab to 130,000 wafers/month

Samsung (China) Semiconductor is expanding its Xi'an NAND flash memory plant. Phase 2 Stage 1 is expected to reach full capacity of 65,000 wafers/month by end-September 2020, and Phase 2 Stage 2 (investment of 56 billion yuan) will bring total capacity to about 130,000 wafers/month by first half of 2021.

“二阶段项目总投资560亿元，在二期一阶段的基础上增资扩建，其产品将比一阶段V5代产品更加先进，建成后二期项目总产能达到约13万片/月。”semiunion.com

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• semiunion.com西安三星二期项目一阶段预计9月底实现满产6.5万片/月-行业新闻-半导体联盟Jul 17, 2020

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