STMicroelectronics and Leti cooperate to industrialize GaN-on-Silicon power technology

STMicroelectronics and Leti announced a cooperation to develop and industrialize GaN-on-Silicon power switching devices on 200mm wafers, with a pilot line at ST's Tours fab expected operational by 2020.

“Recognizing the incredible value of wide-bandgap semiconductors, ST's contributions in Power GaN-on-Si manufacturing and packaging technologies with CEA-Leti move to arm us with the industry's most complete portfolio of GaN and SiC products and capabilities.”globenewswire.com

• 1 source
• globenewswire.comSTMicroelectronics and Leti Develop GaN-on-SiliconSTMicroelectronics International NVSep 24, 2018

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