Samsung starts construction of second phase of Xi'an memory chip facility

Samsung Electronics has started construction of the second phase of its memory chip facility in Xi'an, China. The facility is scheduled to begin operation in 2019 for mass production of V-NAND flash memory. Samsung announced an additional $7 billion investment in August 2017.

“The new facility is scheduled to be put into operation in 2019 and will be used for mass production of V-NAND flash memory.”globaltimes.cn

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• globaltimes.cnSamsung expands Xi'an chip facility to build global semiconductor base - Global TimesGlobal TimesNov 15, 2017

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