Denso and Fuji Electric invest ¥211.6 billion in SiC power semiconductors

Denso and Fuji Electric are collaborating on silicon carbide (SiC) power semiconductors, investing a total of ¥211.6 billion. Denso will produce SiC wafers and epi-wafers in Mie and Aichi prefectures, while Fuji Electric will produce epi-wafers and power devices in Matsumoto. The Japanese government will subsidize up to ¥70.5 billion.

“デンソーと富士電機は、炭化ケイ素（SiC）パワー半導体で協業し、両社で2116億円を投じる。”xtech.nikkei.com

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• xtech.nikkei.comデンソーと富士電機がSiCに約2100億円、EV本格化前の足場固め狙う | 日経クロステック（xTECH）根津 禎＝日経クロステックJan 17, 2025

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