Raytheon awarded $15M DARPA contract for GaN transistor development

Raytheon has been awarded a four-year, $15 million contract from DARPA under the THREADS program to develop high-power-density gallium nitride transistors for RF sensors, with work conducted in Andover, Massachusetts.

“Our engineers have unlocked a new way to produce gallium nitride, where thermal management is no longer a limiting factor.”semiconductor-today.com

• 1 source
• semiconductor-today.comRaytheon wins $15m four-year DARPA THREADS contract to boost RF sensorsNov 16, 2023

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