STMicroelectronics and Sanan to build $3.2B SiC fab in Chongqing, China

STMicroelectronics signed an agreement with Sanan Optoelectronics to build a new 200 mm silicon carbide (SiC) semiconductor manufacturing joint venture in Chongqing, China. The total investment is about $3.2 billion over five years, with production expected to begin in late 2025 and full buildout by 2028.

“The new fab in Chongqing, China will be a 200 mm SiC semiconductor with ST and Sanan investing about $3.2 billion over the next 5 years.”electronics360.globalspec.com

• 1 source
• electronics360.globalspec.comST to build new 200 mm SiC fab in China | Electronics360Peter BrownJun 8, 2023

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