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Navitas invests $20M in SiC epi-growth facility in Torrance, California · Endata

◂ Announcements

May 30, 2023INVESTMENTTorrance, California, United States

Navitas invests $20M in SiC epi-growth facility in Torrance, California

Navitas Semiconductor announced a $20 million investment to build a three-reactor SiC epi-growth facility at its Torrance, CA headquarters. The first AIXTRON G10-SiC reactor is expected to be qualified and in production in 2024.

Value

$20.0M

Starts operating

2024

Status

Announced

Capacity

three G10-SiC reactors, supporting up to $200m annual production

Productssilicon carbide (SiC) power semiconductorsSiC epitaxial wafers

CompaniesNavitas Semiconductor AIXTRON SE supplier

Sectors#Semiconductors and Industrial Electronics

“An initial $20 million investment enables a three-reactor SiC epi-growth facility at the company’s Torrance, CA headquarters.”einpresswire.com

2 sources
einpresswire.comNavitas Initiates Strategic Manufacturing InvestmentsMay 30, 2023
semiconductor-today.comNavitas invests $20m in its first three Aixtron G10-SiC epi reactorsMay 31, 2023

Summarized from public sources; check the original articles before acting on it.

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