II-VI signs multi-year agreement over $100M to supply SiC substrates

II-VI Inc signed a multi-year agreement worth over $100 million to supply silicon carbide substrates for GaN RF power amplifiers used in 5G wireless base stations. This is II-VI's largest ever agreement.

“II-VI Inc of Saxonburg, PA, USA has signed a multi-year agreement of over $100m (the firm’s largest ever) to supply silicon carbide (SiC) substrates for gallium nitride (GaN) RF power amplifiers deployed in 5G wireless base stations.”semiconductor-today.com

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• semiconductor-today.comII-VI signs multi-year agreement of over $100m to supply SiC substratesDec 6, 2019

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