Raytheon awarded $14.9M contract to enhance GaN semiconductor manufacturing

Raytheon Integrated Defense Systems received a $14.9 million contract from the U.S. Air Force Research Laboratory and the Office of the Secretary of Defense to enhance gallium nitride semiconductor manufacturing for military radar and RF systems.

“Officials of the U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded a $14.9 million contract to the Raytheon Integrated Defense Systems segment in Tewksbury, Mass., to enhance GaN semiconductor manufacturing.”militaryaerospace.com

• 1 source
• militaryaerospace.comRaytheon to enhance gallium nitride technologies for radar and RF | Military AerospaceJan 1, 2017

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