Raytheon awarded $14.9M contract to enhance gallium nitride semiconductor manufacturing

Raytheon received a $14.9 million contract from the U.S. Air Force Research Laboratory and Office of the Secretary of Defense to enhance gallium nitride semiconductor manufacturing for military radar and electronic warfare systems.

“Officials of the U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded a $14.9 million contract for the Raytheon Integrated Defense Systems segment in Tewksbury, Mass., to enhance GaN semiconductor manufacturing.”militaryaerospace.com

• 1 source
• militaryaerospace.comRaytheon to enhance gallium nitride technologies for radar and RF | Military AerospaceNov 1, 2016

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