Innoscience expands GaN fab in Suzhou, China, with mass production start

Innoscience (Suzhou) Semiconductor Co., Ltd. held a groundbreaking ceremony for a mass production and R&D building in Fenhu Hi-tech Development Zone, with an estimated investment of 8 billion RMB. Mass production of 8-inch GaN-on-Si wafers has started, with capacity reaching 6,000 wafers per month by end of 2021 and 780,000 wafers per year by end of 2022.

“The mass production of GaN-based materials means that the company has entered the fast lane, and R&D is the foundation for Innoscience to move forward.”innoscience.com

• 1 source
• innoscience.comInnoscience(Suzhou)GaN FAB successfully expanded-InnoscienceJun 5, 2021

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