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BAE Systems signed a cooperative agreement with the Air Force Research Laboratory (AFRL) for the first phase of a technical effort to transition GaN semiconductor technology to BAE Systems' Advanced Microwave Products center. The work will take place in Nashua, New Hampshire, aiming to establish a 140 nm GaN MMIC process qualified for production by 2020.
“This effort will leverage AFRL's high performance technology and BAE Systems' 6-in. manufacturing capability to advance the state-of-the-art in GaN MMIC performance, reliability and affordability.”microwavejournal.com
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