Element to invest 4.4 billion rubles in GaN power transistor production in Voronezh

Russian microelectronics group Element will invest 4.4 billion rubles to produce gallium nitride (GaN) power transistors at the Research Institute of Electronic Technology (NIIET) in Voronezh. The facility will produce 5,500 200-mm wafers per year, making NIIET the first Russian full-cycle GaN transistor producer.

“The project will expand NIIET's capabilities in the assembly of microwave and power GaN transistors: the production of gallium nitride crystals will be launched.”www1.ru

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• www1.ruLargest Microelectronics Manufacturer "Element" to Invest 4.4 Billion Rubles in Power Transistor ProductionMatilda HromovaJul 22, 2025

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