# Micron to build second leading-edge DRAM fab in Boise, Idaho

Micron announced plans to build a second leading-edge memory manufacturing fab in Boise, Idaho, as part of its expanded US investment, with DRAM output from the first Idaho fab scheduled to begin in 2027.

- Type: New facility
- Announced: 2025-06-12
- Where: Boise, Idaho, United States
- Status: announced
- Products: DRAM, High Bandwidth Memory (HBM)
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Micron Technology](https://endata.com/companies/16026.md)

## Sources

- [investors.micron.com](https://investors.micron.com/news/press-release/2025/Micron-and-Trump-Administration-Announce-Expanded-U-S--Investments-in-Leading-Edge-DRAM-Manufacturing-and-RD-06-12-2025/default.aspx), 2025-06-12: "Micron plans to invest an additional $30 billion beyond prior plans which includes building a second leading-edge memory fab in Boise, Idaho"

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.