# Denso and Fuji Electric invest ¥211.6 billion in SiC power semiconductors

Denso and Fuji Electric are collaborating on silicon carbide (SiC) power semiconductors, investing a total of ¥211.6 billion. Denso will produce SiC wafers and epi-wafers in Mie and Aichi prefectures, while Fuji Electric will produce epi-wafers and power devices in Matsumoto. The Japanese government will subsidize up to ¥70.5 billion.

- Type: Investment
- Announced: 2025-01-17
- Where: Inabe, Mie; Kota, Aichi; Matsumoto, Nagano, Japan
- Value: $1.40B (211.6B JPY)
- Starts operating: Sep 2026
- Status: announced
- Capacity: Denso: 60,000 8-inch wafers/year (Inabe), 100,000 epi-wafers/year (Kota); Fuji Electric: 240,000 epi-wafers/year, 310,000 power devices/year (Matsumoto)
- Products: SiC wafers, SiC epi-wafers, SiC power devices
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [DENSO](https://endata.com/companies/2901.md) (investor)
- [Fuji Electric](https://endata.com/companies/13773.md) (investor)

## Sources

- [xtech.nikkei.com](https://xtech.nikkei.com/atcl/nxt/mag/ne/18/00001/00495/), 2025-01-17: "デンソーと富士電機は、炭化ケイ素（SiC）パワー半導体で協業し、両社で2116億円を投じる。"

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.