# Finwave Semiconductor and GlobalFoundries partner on RF GaN-on-Si technology

Finwave Semiconductor and GlobalFoundries announced a strategic technology development and licensing agreement to optimize and scale Finwave's E-mode MISHEMT GaN-on-Si technology to volume production at GF's 200mm fab in Burlington, Vermont.

- Type: Partnership
- Announced: 2024-08-29
- Where: Burlington, Vermont, United States
- Status: announced
- Products: RF GaN-on-Si technology, E-mode MISHEMT, power amplifiers
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [GlobalFoundries](https://endata.com/companies/664.md) (partner)
- [Finwave Semiconductor](https://endata.com/companies/79486.md) (partner)

## Sources

- [streetinsider.com](https://www.streetinsider.com/Globe+Newswire/Finwave+Semiconductor+and+GlobalFoundries+Partner+on+RF+GaN-on-Si+Technology+for+Cellular+Handset+Applications/23663482.html), 2024-08-29: "This agreement marks a significant milestone for Finwave."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.