# Toshiba completes new 300-mm wafer fab for power semiconductors in Japan

Toshiba Electronic Devices & Storage Corporation completed construction of Phase 1 of a new 300-millimeter wafer fabrication facility for power semiconductors at Kaga Toshiba Electronics in Ishikawa Prefecture, Japan. Mass production is expected to start in the second half of fiscal year 2024.

- Type: New facility
- Announced: 2024-05-23
- Where: Kaga Toshiba Electronics Corporation, Ishikawa Prefecture, Japan, Japan
- Starts operating: Q4 2024
- Status: completed
- Capacity: 2.5 times production capacity for power semiconductors compared to fiscal 2021 (Phase 1 full-scale operation)
- Products: power semiconductors (MOSFETs and IGBTs)
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Toshiba Electronic Devices & Storage Corporation](https://endata.com/companies/32335.md)

## Sources

- [za.investing.com](https://za.investing.com/news/toshiba-completes-new-300millimeter-wafer-fabrication-facility-for-power-semiconductors-93CH-3162496), 2024-05-23: "Toshiba Electronic Devices & Storage Corporation today held a ceremony to mark the completion of a new 300-millimeter wafer fabrication facility for power semiconductors and an office building at Kaga Toshiba Electronics Corporation."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.