# STMicroelectronics and Sanan to build $3.2B SiC plant in Chongqing

STMicroelectronics and Sanan Optoelectronics plan to invest $3.2 billion to jointly build an 8-inch silicon carbide epitaxial and chip foundry in Chongqing, China. The joint venture is expected to start production by 2025 and reach full capacity in 2028.

- Type: New facility
- Announced: 2024-01-15
- Where: Chongqing, China
- Value: $3.20B
- Starts operating: 2025
- Status: announced
- Capacity: 10,000 8-inch silicon carbide wafers per week
- Products: silicon carbide wafers
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [STMicroelectronics](https://endata.com/companies/21952.md) (partner)
- [Sanan Optoelectronics](https://endata.com/companies/23824.md) (partner)

## Sources

- [haythink.com](https://www.haythink.com/stmicroelectronics-will-build-an-8-inch-silicon-carbide-substrate-production-base-in-china/), 2024-01-15: "STMicroelectronics and Sanan Optoelectronics announced that they plan to invest $3.2 billion to jointly build an 8-inch silicon carbide epitaxial and chip foundry."

---
Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.