# Samsung initiates expansion of Xi'an NAND flash fab with 236-layer process

Samsung Electronics has started the main construction phase for its 12-inch NAND flash M-FAB in Xi'an, China, and plans to upgrade the fab to a 236-layer stacking process with significant capacity expansion. Equipment procurement has begun, with deliveries by end of 2023 and eighth-generation NAND equipment in 2024.

- Type: Expansion
- Announced: 2023-12-13
- Where: Xi'an, China
- Status: under construction
- Capacity: over 265,000 12-inch wafers per month
- Products: NAND flash memory chips, 3D NAND
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Samsung Electronics](https://endata.com/companies/647.md)

## Sources

- [trendforce.com](https://www.trendforce.com/news/2023/12/13/news-samsung-secures-indefinite-u-s-exemption-initiates-expansion-plans-for-xian-base-in-china/), 2023-12-13: "Samsung has initiated efforts to boost capacity at its Xi’an plant."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.