# Raytheon awarded $15M DARPA contract for GaN transistor development

Raytheon has been awarded a four-year, $15 million contract from DARPA under the THREADS program to develop high-power-density gallium nitride transistors for RF sensors, with work conducted in Andover, Massachusetts.

- Type: Contract
- Announced: 2023-11-16
- Where: Andover, Massachusetts, United States
- Value: $15.0M
- Status: announced
- Products: gallium nitride transistors, RF sensors
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Raytheon](https://endata.com/companies/19863.md)
- [DARPA](https://endata.com/companies/34950.md) (customer)

## Sources

- [semiconductor-today.com](https://www.semiconductor-today.com/news_items/2023/nov/raytheon-161123.shtml), 2023-11-16: "Our engineers have unlocked a new way to produce gallium nitride, where thermal management is no longer a limiting factor."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.