# STMicroelectronics and Sanan to build $3.2B SiC fab in Chongqing, China

STMicroelectronics signed an agreement with Sanan Optoelectronics to build a new 200 mm silicon carbide (SiC) semiconductor manufacturing joint venture in Chongqing, China. The total investment is about $3.2 billion over five years, with production expected to begin in late 2025 and full buildout by 2028.

- Type: New facility
- Announced: 2023-06-08
- Where: Chongqing, China
- Value: $3.20B
- Starts operating: Q4 2025
- Status: announced
- Capacity: 200 mm SiC wafers
- Products: silicon carbide (SiC) semiconductors
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [STMicroelectronics](https://endata.com/companies/21952.md)
- [Sanan Optoelectronics](https://endata.com/companies/23824.md) (partner)

## Sources

- [electronics360.globalspec.com](https://electronics360.globalspec.com/article/19809/st-to-build-new-200-mm-sic-fab-in-china), 2023-06-08: "The new fab in Chongqing, China will be a 200 mm SiC semiconductor with ST and Sanan investing about $3.2 billion over the next 5 years."

---
Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.