# Navitas invests $20M in SiC epi-growth facility in Torrance, California

Navitas Semiconductor announced a $20 million investment to build a three-reactor SiC epi-growth facility at its Torrance, CA headquarters. The first AIXTRON G10-SiC reactor is expected to be qualified and in production in 2024.

- Type: Investment
- Announced: 2023-05-30
- Where: Torrance, California, United States
- Value: $20.0M
- Starts operating: 2024
- Status: announced
- Capacity: three G10-SiC reactors, supporting up to $200m annual production
- Products: silicon carbide (SiC) power semiconductors, SiC epitaxial wafers
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Navitas Semiconductor](https://endata.com/companies/28196.md)
- [AIXTRON SE](https://endata.com/companies/26924.md) (supplier)

## Sources

- [einpresswire.com](https://www.einpresswire.com/article/636729225/navitas-initiates-strategic-manufacturing-investments), 2023-05-30: "An initial $20 million investment enables a three-reactor SiC epi-growth facility at the company’s Torrance, CA headquarters."
- [semiconductor-today.com](https://www.semiconductor-today.com/news_items/2023/may/navitas-310523.shtml), 2023-05-31: "Adding a high-quality SiC epi-layer onto a raw SiC wafer is a critical process step prior to individual device manufacturing, and adding the Aixtron in-house epi capability to existing subcontract process flows expands available capacity, lowers finished wafer cost, increases quality and reduces cyc"

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.