# Shanghai Gecore Semiconductor to build 2.5B yuan GaN wafer plant in Jiangxi

Shanghai Gecore Semiconductor Co., Ltd. signed an agreement to invest 2.5 billion yuan in a third-generation semiconductor industrialization project in Wannian County, Shangrao, Jiangxi. The plant will produce 50,000 8-inch GaN power devices annually, becoming the second GaN automotive power device wafer fab in China.

- Type: New facility
- Announced: 2023-01-05
- Where: Wannian County, Shangrao, Jiangxi, China
- Value: $370.0M (2.50B CNY)
- Status: announced
- Capacity: 50,000 8-inch GaN power devices per year
- Products: 8-inch GaN power devices, GaN automotive power devices
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Shanghai Gecore Semiconductor Co., Ltd.](https://endata.com/companies/67753.md)

## Sources

- [news.qq.com](https://news.qq.com/rain/a/20230109A04H2D00), 2023-01-09: "项目投产后可实现年产5万片8寸GAN功率器件，成为江西省第一家中国第二家量产氮化镓车载功率器件的晶圆厂。"

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.