# Toshiba to build new 300mm wafer fab for power semiconductors in Ishikawa

Toshiba Electronic Devices & Storage Corporation announced it will construct a new 300-millimeter wafer fabrication facility for power semiconductors at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, Japan. Phase 1 production is scheduled to start within fiscal 2024, and when fully operational, capacity will be 2.5 times that of fiscal 2021.

- Type: Expansion
- Announced: 2022-02-01
- Where: Kaga Toshiba Electronics Corporation, Ishikawa Prefecture, Japan
- Starts operating: 2025
- Status: announced
- Capacity: 2.5 times fiscal 2021 capacity
- Products: power semiconductors, low-voltage MOSFETs, IGBTs
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Toshiba Electronic Devices & Storage Corporation](https://endata.com/companies/32335.md)

## Sources

- [toshiba.semicon-storage.com](https://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2022/02/corporate-20220204-1.html), 2022-02-01: "Toshiba today announced that it will construct a new 300-milimeter wafer fabrication facility for power semiconductors at its main discrete semiconductor production base, Kaga Toshiba Electronics Corporation, in Ishikawa Prefecture."
- [toshiba.semicon-storage.com](https://toshiba.semicon-storage.com/us/company/news/2022/02/corporate-20220204-1.html), 2022-02-04: "Power devices are essential components for managing and reducing power consumption in every kind of electronic equipment, and for achieving a carbon neutral society."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.