# DARPA awards Transphorm contract for N-polar GaN-on-sapphire development

Transphorm, Inc. was awarded a $0.9 million contract by DARPA (with a $0.5 million option) to develop nitrogen-polar Gallium Nitride on sapphire substrates for RF/millimeter wave applications, with UCSB as sub-contractor.

- Type: Contract
- Announced: 2021-10-25
- Where: United States
- Value: $900K
- Status: announced
- Products: nitrogen-polar Gallium Nitride (GaN) epiwafers on sapphire substrates, RF/mm-wave transistors
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Transphorm](https://endata.com/companies/40965.md)
- [DARPA](https://endata.com/companies/34950.md) (customer)
- [University of California, Santa Barbara](https://endata.com/companies/58666.md) (partner)

## Sources

- [defenseadvancement.com](https://www.defenseadvancement.com/news/darpa-awards-contract-to-develop-alternative-nitrogen-polar-gan-on-sapphire-substrates/), 2021-10-25: "We’re thankful to DARPA for the opportunity and confidence to further define the N-polar GaN solution for RF applications."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.