# Hunan Sanan opens China's first vertically integrated SiC line in Changsha

Hunan Sanan Semiconductor has officially inaugurated a vertically integrated SiC production line in Changsha, China, with an investment of 16 billion RMB ($2.5 billion). The facility handles crystal growth to power devices and has a monthly output capacity of 30,000 6-inch SiC wafers.

- Type: New facility
- Announced: 2021-06-24
- Where: Changsha High-tech Industrial Park, Changsha, China
- Value: $2.50B (16.0B CNY)
- Starts operating: 24 Jun 2021
- Status: completed
- Capacity: 30,000 6-inch SiC wafers per month
- Products: silicon carbide wafers, power devices
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Hunan Sanan Semiconductor](https://endata.com/companies/56021.md)
- [Sanan Optoelectronics](https://endata.com/companies/23824.md) (partner)

## Sources

- [compoundsemiconductor.net](https://compoundsemiconductor.net/article/113378/Hunan_Sanan_opens_Chinaand_s_First_Vertically_Integrated_SiC_Line), 2021-06-24: "Hunan Sanan Semiconductor, located in Changsha High-tech Industrial Park, has held its official inauguration to start production of China's first vertically integrated SiC line."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.