# Innoscience expands GaN fab in Suzhou, China, with mass production start

Innoscience (Suzhou) Semiconductor Co., Ltd. held a groundbreaking ceremony for a mass production and R&D building in Fenhu Hi-tech Development Zone, with an estimated investment of 8 billion RMB. Mass production of 8-inch GaN-on-Si wafers has started, with capacity reaching 6,000 wafers per month by end of 2021 and 780,000 wafers per year by end of 2022.

- Type: Expansion
- Announced: 2021-06-05
- Where: Fenhu Hi-tech Development Zone, Suzhou, China
- Value: $1.24B (8.00B CNY)
- Starts operating: 5 Jun 2021
- Status: under construction
- Capacity: 780,000 8-inch GaN-on-Si wafers per year
- Products: GaN-on-Si wafers, GaN chips
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Innoscience](https://endata.com/companies/55632.md)

## Sources

- [innoscience.com](https://www.innoscience.com/news/press-releases/6681), 2021-06-05: "The mass production of GaN-based materials means that the company has entered the fast lane, and R&D is the foundation for Innoscience to move forward."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.