# Jiangsu Zhiyuan breaks ground on $30B semiconductor power device plant in Xuzhou

Jiangsu Zhiyuan Semiconductor held a groundbreaking ceremony for a large-power discrete device project in Tongshan District (Xuzhou High-tech Zone), Xuzhou. The project, with a total investment of CNY 3 billion, is expected to produce 380 million semiconductor devices annually.

- Type: New facility
- Announced: 2020-10-23
- Where: Tongshan District (Xuzhou High-tech Zone), Xuzhou, Jiangsu, China
- Value: $450.0M (3.00B CNY)
- Status: under construction
- Capacity: 380 million semiconductor devices per year
- Products: large-power discrete semiconductor devices
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Jiangsu Zhiyuan Semiconductor](https://endata.com/companies/50707.md)

## Sources

- [news.hqew.com](https://news.hqew.com/info-358844), 2020-10-23: "特别是总投资30亿元的江苏致远半导体大功率分立器件项目，达产后可年产半导体器件3.8亿只"

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.