# Samsung to boost Xi'an NAND flash fab to 130,000 wafers/month

Samsung (China) Semiconductor is expanding its Xi'an NAND flash memory plant. Phase 2 Stage 1 is expected to reach full capacity of 65,000 wafers/month by end-September 2020, and Phase 2 Stage 2 (investment of 56 billion yuan) will bring total capacity to about 130,000 wafers/month by first half of 2021.

- Type: Expansion
- Announced: 2020-07-17
- Where: Xi'an, Shaanxi, China
- Value: $8.00B (56.0B CNY)
- Starts operating: 2021
- Status: under construction
- Capacity: 130,000 wafers/month (total Phase 2)
- Products: NAND flash memory chips
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Samsung (China) Semiconductor](https://endata.com/companies/19018.md)

## Sources

- [semiunion.com](https://www.semiunion.com/news/2020/1599.html), 2020-07-17: "二阶段项目总投资560亿元，在二期一阶段的基础上增资扩建，其产品将比一阶段V5代产品更加先进，建成后二期项目总产能达到约13万片/月。"

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.