# Huaton Chip to build $410M compound semiconductor plant in Shanghai Jinshan

Beijing Huaton Chip Technology signed an agreement to build a third-generation compound semiconductor project in Shanghai Jinshan Industrial Zone. The project involves a total investment of 2.9 billion yuan ($410 million) and will produce GaAs and GaN chips for 5G base stations and radar.

- Type: Investment
- Announced: 2020-06-22
- Where: Shanghai Jinshan Industrial Zone, China
- Value: $410.0M (2.90B CNY)
- Status: announced
- Capacity: Phase 1: 7000 GaAs wafers/month; Phase 2: 3000 GaN RF chips/month and 20000 power semiconductor chips/month
- Products: GaAs chips, GaN RF chips, power semiconductor chips
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Beijing Huaton Chip Technology](https://endata.com/companies/48019.md)

## Sources

- [semiunion.com](https://www.semiunion.com/park/0GGP42020.html), 2020-06-22: "华通芯电第三代化合物半导体项目总投资29亿元，固定资产投资22.7亿元，计划用地50亩"

---
Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.