# II-VI signs multi-year agreement over $100M to supply SiC substrates

II-VI Inc signed a multi-year agreement worth over $100 million to supply silicon carbide substrates for GaN RF power amplifiers used in 5G wireless base stations. This is II-VI's largest ever agreement.

- Type: Contract
- Announced: 2019-12-06
- Value: $100.0M
- Status: announced
- Products: silicon carbide substrates, GaN-on-SiC RF power amplifiers
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [II-VI Incorporated](https://endata.com/companies/35405.md)

## Sources

- [semiconductor-today.com](https://www.semiconductor-today.com/news_items/2019/dec/iivi-061219.shtml), 2019-12-06: "II-VI Inc of Saxonburg, PA, USA has signed a multi-year agreement of over $100m (the firm’s largest ever) to supply silicon carbide (SiC) substrates for gallium nitride (GaN) RF power amplifiers deployed in 5G wireless base stations."

---
Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.