# STMicroelectronics and Leti cooperate to industrialize GaN-on-Silicon power technology

STMicroelectronics and Leti announced a cooperation to develop and industrialize GaN-on-Silicon power switching devices on 200mm wafers, with a pilot line at ST's Tours fab expected operational by 2020.

- Type: Partnership
- Announced: 2018-09-24
- Where: Tours, France, France
- Status: announced
- Products: GaN-on-Silicon power diodes, GaN-on-Silicon transistors
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [STMicroelectronics](https://endata.com/companies/21952.md)
- [Leti](https://endata.com/companies/34482.md) (partner)

## Sources

- [globenewswire.com](https://www.globenewswire.com/news-release/2018/09/24/1575033/0/en/stmicroelectronics-and-leti-develop-gan-on-silicon-technology-for-power-conversion-applications.html), 2018-09-24: "Recognizing the incredible value of wide-bandgap semiconductors, ST's contributions in Power GaN-on-Si manufacturing and packaging technologies with CEA-Leti move to arm us with the industry's most complete portfolio of GaN and SiC products and capabilities."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.