# BAE Systems signs AFRL contract to mature GaN semiconductor technology

BAE Systems signed a cooperative agreement with the Air Force Research Laboratory (AFRL) for the first phase of a technical effort to transition GaN semiconductor technology to BAE Systems' Advanced Microwave Products center. The work will take place in Nashua, New Hampshire, aiming to establish a 140 nm GaN MMIC process qualified for production by 2020.

- Type: Contract
- Announced: 2018-09-17
- Where: Nashua, New Hampshire, United States
- Status: announced
- Products: GaN MMIC process, GaN semiconductor technology
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md), [Aerospace Components](https://endata.com/sectors/aerospace-components.md)

## Companies

- [BAE Systems](https://endata.com/companies/4538.md)
- [Air Force Research Laboratory](https://endata.com/companies/16499.md) (customer)

## Sources

- [microwavejournal.com](https://www.microwavejournal.com/articles/31066-bae-systems-receives-afrl-contract-to-mature-air-force-ew-semiconductor-technology), 2018-09-17: "This effort will leverage AFRL's high performance technology and BAE Systems' 6-in. manufacturing capability to advance the state-of-the-art in GaN MMIC performance, reliability and affordability."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.