# Samsung Electronics to break ground for second memory fab in Xian, China

Samsung Electronics will hold a groundbreaking ceremony for its second memory fabrication line in Xian, China, with a total investment of 8 trillion won ($7.47 billion). Commercial production is expected to begin in 2019.

- Type: New facility
- Announced: 2018-03-27
- Where: Xian, China
- Value: $7.47B (8000.0B KRW)
- Starts operating: 2019
- Status: announced
- Capacity: 220,000 wafers per month (total after expansion)
- Products: NAND flash memory chips
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Samsung Electronics](https://endata.com/companies/647.md)

## Sources

- [pulse.mk.co.kr](https://pulse.mk.co.kr/news/all/8245423), 2018-03-27: "Samsung Electronics, a global leader in memory semiconductor technology, will hold a groundbreaking ceremony on Wednesday for its second memory fabrication line in Xian, China, according to industry sources on Monday."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.