# Intel expands 3D-NAND Flash capacity at Dalian fab

Intel is engaging in the second-phase expansion of its fab in Dalian, China, aiming to double the facility's 3D-NAND Flash capacity by the end of 2018.

- Type: Expansion
- Announced: 2018-01-03
- Where: Dalian, China
- Starts operating: 2018
- Status: under construction
- Capacity: double 3D-NAND Flash capacity
- Products: 3D-NAND Flash memory
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Intel](https://endata.com/companies/21062.md)

## Sources

- [trendforce.com](https://www.trendforce.com/presscenter/news/20180103-9934.html), 2018-01-03: "Intel is engaging in the second-phase expansion of its fab in the Chinese city of Dalian and aims to double the facility’s 3D-NAND Flash capacity by the end of 2018."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.