# TriQuint awarded $17.5M GaN manufacturing development contract by US Air Force

TriQuint Semiconductor has been awarded a $17.5 million Defense Production Act Title III contract by the US Air Force Research Laboratory to develop gallium nitride (GaN) manufacturing technology. The work will be performed at TriQuint's Richardson, Texas facility.

- Type: Contract
- Announced: 2017-07-04
- Where: Richardson, Texas, United States
- Value: $17.5M
- Status: announced
- Products: gallium nitride integrated circuits, MMICs
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [TriQuint Semiconductor](https://endata.com/companies/25352.md)
- [US Air Force Research Laboratory](https://endata.com/companies/22749.md) (customer)

## Sources

- [qorvo.gcs-web.com](https://qorvo.gcs-web.com/news-releases/news-release-details/triquint-gan-leadership-leads-new-175m-title-iii-manufacturing), 2017-07-04: "TriQuint Semiconductor today announced that it has been awarded a Defense Production Act Title III gallium nitride (GaN) manufacturing development contract by the US Air Force Research Laboratory (AFRL)."

---
Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.