# Tsinghua Unigroup breaks ground for $30B memory plant in Nanjing

Tsinghua Unigroup broke ground for a memory plant in Nanjing, China, to manufacture 3D NAND flash and DRAM chips. The two-phase project has a total investment of about US$30 billion, with phase one expected to be completed by 2019.

- Type: New facility
- Announced: 2017-04-12
- Where: Nanjing, China
- Value: $30.0B
- Starts operating: 2019
- Status: under construction
- Capacity: Phase one: 100,000 wafers per month; Phase two: 200,000 wafers per month
- Products: 3D NAND flash, DRAM chips
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Tsinghua Unigroup](https://endata.com/companies/19494.md)
- [China Development Bank](https://endata.com/companies/23534.md) (investor)
- [Sino IC Capital](https://endata.com/companies/23535.md) (investor)

## Sources

- [simmtester.com](https://www.simmtester.com/News/IndustryArticle/19067), 2017-04-12: "Tsinghua Unigroup has recently broken ground for a memory plant in Nanjing which will be engaged in the manufacture of 3D NAND flash and DRAM chips."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.