# Raytheon awarded $14.9M contract to enhance GaN semiconductor manufacturing

Raytheon Integrated Defense Systems received a $14.9 million contract from the U.S. Air Force Research Laboratory and the Office of the Secretary of Defense to enhance gallium nitride semiconductor manufacturing for military radar and RF systems.

- Type: Contract
- Announced: 2017-01-01
- Where: Tewksbury, Mass., United States
- Value: $14.9M
- Status: announced
- Products: gallium nitride (GaN)-based semiconductors, monolithic microwave-integrated circuits (MMICs), circulator components
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Raytheon](https://endata.com/companies/19863.md)
- [U.S. Air Force Research Laboratory](https://endata.com/companies/16221.md) (customer)
- [Office of the Secretary of Defense](https://endata.com/companies/21128.md) (customer)

## Sources

- [militaryaerospace.com](https://www.militaryaerospace.com/communications/article/16709884/raytheon-to-enhance-gallium-nitride-technologies-for-radar-and-rf), 2017-01-01: "Officials of the U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded a $14.9 million contract to the Raytheon Integrated Defense Systems segment in Tewksbury, Mass., to enhance GaN semiconductor manufacturing."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.